STP6NC90Z N-CHANNEL Power MOSFET

ST Microelectronics

Description

N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 s s STP6NC9.
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toba.

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Datasheet Specifications

Part number: STP6NC90Z
Manufacturer: STMicroelectronics ↗
File Size: 532.81 KB
Datasheet: STP6NC90Z_STMicroelectronics.pdf
Description: N-CHANNEL Power MOSFET

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj July 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Vol

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STP6NC90Z N-CHANNEL Power MOSFET ST Microelectronics

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