STW12NK90Z Datasheet - ST Microelectronics

STW12NK90Z N-CHANNEL Power MOSFET

This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most.

STW12NK90Z Features

* Order code STW12NK90Z VDSS 900 V RDS(on) max ID Pw < 0.88 Ω 11 A 230 W

* Extremely high dv/dt capability

* 100% avalanche tested

* Gate charge minimized

* Very low intrinsic capacitance

* Very good manufacturing repeatability Application

* Switching applications Desc

STW12NK90Z_STMicroelectronics.pdf