STW22NM60N

N-Channel MOSFET

ST Microelectronics

STW22NM60N Features

* Product(s) D(2) olete G(1) Obs S(3) t(s) - AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STW22NM60N 650 V 0.22 Ω 16 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applica

STW22NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STW22NM60N Datasheet (318.15 KB)