20NM65N - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most
20NM65N Features
* 1 2 3 I 2PAKFP (TO-281) Order code VDSS @Tjmax STFI20NM65N 710 V RDS(on) max. 0.270 Ω ID 15 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Applications
* Switching applications Figure 1. Internal schematic diagram
