2STC2510

High power NPN epitaxial planar bipolar transistor

STMicroelectronics

2STC2510 General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC2510 Package TO-3P Packaging Tube Order code 2S.

2STC2510 Datasheet (128.04 KB)

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2STC2510

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STMicroelectronics ↗

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128.04 KB

Description:

High power npn epitaxial planar bipolar transistor.

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2STC2510 High power NPN epitaxial planar bipolar transistor STMicroelectronics

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2STC2510 General Description

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