2STC2510 - High power NPN epitaxial planar bipolar transistor

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STMicroelectronics

Part number	2STC2510
Manufacturer	STMicroelectronics
File Size	128.04 KB
Description	High power NPN epitaxial planar bipolar transistor
Datasheet	2STC2510 Datasheet
Additional preview pages of the 2STC2510 datasheet.

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1.

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Published: May 31, 2009 |