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2STC4467 High power NPN epitaxial planar bipolar transistor

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Description

2STC4467 High power NPN epitaxial planar bipolar transistor .
soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.

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Features

* High breakdown voltage VCEO = 120 V
* Complementary to 2STA1694
* Fast-switching speed t(s)
* Typical ft = 20 MHz c

Applications

* P

2STC4467 Distributors

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