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2STC4467 High power NPN epitaxial planar bipolar transistor

2STC4467 Description

2STC4467 High power NPN epitaxial planar bipolar transistor .
soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.

2STC4467 Features

* High breakdown voltage VCEO = 120 V
* Complementary to 2STA1694
* Fast-switching speed t(s)
* Typical ft = 20 MHz c

2STC4467 Applications

* P

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High power NPN epitaxial planar bipolar transistor STMicroelectronics
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