Part number:
GS-P15-A
Manufacturer:
File Size:
47.56 KB
Description:
Bidirectionaldata line protector.
GS-P15-A
47.56 KB
Bidirectionaldata line protector.
📁 Related Datasheet
GS-065-004-1-L - 650V E-mode GaN transistor
(GaN Systems)
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GS-065-004-6-L - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.
GS-065-008-1-L - 650V E-mode GaN transistor
(GaN Systems)
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.
GS-065-008-6-L - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.
GS-065-011-1-L - 650V E-mode GaN transistor
(GaN Systems)
GS-065-011-1-L 650 V E-mode GaN transistor
Datasheet
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.
GS-065-011-2-L - 650V E-mode GaN transistor
(GaN Systems)
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .
GS-065-011-6-L - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12.
GS-065-011-6-LR - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.
