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IRF530 Datasheet - STMicroelectronics

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

IRF530 General Description

This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer ap.

IRF530 Datasheet (297.06 KB)

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IRF530

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STMicroelectronics ↗

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297.06 KB

Description:

N-channel enhancement mode power mos transistor.
IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICA.

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IRF530 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

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IRF530 General Description

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