IRF530 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics

Description

IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICA.
This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate c.

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Datasheet Specifications

Part number: IRF530
Manufacturer: STMicroelectronics ↗
File Size: 297.06 KB
Datasheet: IRF530_STMicroelectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Applications

* It is Palso intended for any applications with low gate drive terequirements. leAPPLICATIONS os HIGH CURRENT, HIGH SWITCHING SPEED bss SOLENOID AND RELAY DRIVERS Os REGULATOR -s DC-DC & DC-AC CONVERTERS t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, cABS, AIR-BAG, LAMPDR

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IRF530 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

STMicroelectronics IRF530-like datasheet