IRF530
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N-channel enhancement mode power mos transistor. This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capac
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IRF530 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF530
FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.
IRF530 - N-Channel MOSFET
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Data Sheet
IRF530
February 2002
[ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 1.
IRF530 - N-Channel MOSFET
(Harris Corporation)
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IRF530 - Power MOSFET
(Vishay)
.vishay.
IRF530
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF530 - Power Field Effect Transistor
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IRF530
Product Preview TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This advanced TMOS power FET is designed to .
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l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C.
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isc P-Channel MOSFET Transistor
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·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche test.
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