Part number:
P90N55F4
Manufacturer:
File Size:
227.26 KB
Description:
N-channel power mosfet.
* Type STP90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A
* Exceptional dv/dt capability
* Extremely low on-resistance RDS(on)
* 100% avalanche tested Applications
* Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGA
P90N55F4 Datasheet (227.26 KB)
P90N55F4
227.26 KB
N-channel power mosfet.
📁 Related Datasheet
P90N20D - Power MOSFET
(International Rectifier)
PD - 94301A
SMPS MOSFET IRFP90N20D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.023Ω
ID
94Ao
Bene.
P90NF03L - N-Channel Power MOSFET
(STMicroelectronics)
..
STP90NF03L STB90NF03L-1
N-channel 30V - 0.0056Ω -90A TO-220/I2PAK Low gate charge STripFET™ Power MOSFET
General features
Type ST.
P9006EDA - P-Channel Enhancement Mode Field Effect Transistor
(NIKO-SEM)
NIKO-SEM
P-Channel Enhancement Mode
P9006EDA
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
9.
P9006EDG - P-Channel MOSFET
(UNIKC)
P9006EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA .
P9006EDG - P-Channel Logic Level Enhancement
(Niko-Sem)
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -60V RDS.
P9006EDG - P-Channel MOSFET
(VBsemi)
P9006EDG
.VBsemi.
P9006EDG P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.
P9006EI - P-Channel MOSFET
(UNIKC)
P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA =.
P9006EL - MOSFET
(UNIKC)
P9006EL
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -4A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA =.