P9006EDG Datasheet - UNIKC

P9006EDG P-Channel MOSFET

P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -15 -10 -50 Avalanche Current IAS -25 Avalanche Energy L = 0.1mH EAS 31 Power Dissipation TC = 25 °C TC = 100 °C PD 41 16 .

P9006EDG Datasheet (439.73 KB)