PD57060S-E RF POWER transistor

STMicroelectronics

Description

PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.

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Datasheet Specifications

Part number: PD57060S-E
Manufacturer: STMicroelectronics ↗
File Size: 478.75 KB
Datasheet: PD57060S-E-STMicroelectronics.pdf
Description: RF POWER transistor

Features

* Excellent thermal stability
* Common source configuration
* POUT = 60 W with 14.3dB gain@ 945 MHz/28 V

Applications

* It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solut

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