PD57060S-E

RF POWER transistor

STMicroelectronics

PD57060S-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 60 W with 14.3dB gain@ 945 MHz/28 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band comme

PD57060S-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and r.

PD57060S-E Datasheet (478.75 KB)