Datasheet4U Logo Datasheet4U.com

PD57070-E RF POWER transistor

PD57070-E Description

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

PD57070-E Features

* Excellent thermal stability
* Common source configuration
* POUT = 70 W with 14.7dB gain @945 MHz/28 V

PD57070-E Applications

* It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solut

📥 Download Datasheet

Preview of PD57070-E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PD570BA - N-Channel MOSFET (UNIKC)
  • PD5710 - User Manual (Escon)
  • PD5715 - User Manual (Escon)
  • PD5720 - User Manual (Escon)
  • PD5730 - User Manual (Escon)
  • PD5036 - Telephone Ring Generator Controller (PowerDsine)
  • PD504BA - N-Channel MOSFET (UNIKC)
  • PD506BA - N-Channel MOSFET (UNIKC)

📌 All Tags

POWER transistor STMicroelectronics
STMicroelectronics PD57070-E-like datasheet