SCT040W120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT040W120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT040W120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 230.51 KB
Datasheet: SCT040W120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT040W120G3AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT040W120G3AG Distributors

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SCT040W120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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