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SCT040W65G3-4AG 650V 30A Automotive-grade silicon carbide Power MOSFET

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Description

SCT040W65G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Features

* Order code SCT040W65G3-4AG VDS 650 V RDS(on) typ. 45 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

Applications

* Power source(2) ND1TPS2DS3G4
* DC/DC converter for EV/HEV
* Main inverter (electric traction)

SCT040W65G3-4AG Distributors

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📌 All Tags

SCT040W65G3-4AG 650V 30A Automotive-grade silicon carbide Power MOSFET STMicroelectronics
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