SCT040W65G3-4 - Silicon carbide Power MOSFET
SCT040W65G3-4 Features
* HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high operating junct
