SCT040W65G3-4 - Silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT040W65G3-4
Manufacturer	STMicroelectronics ↗
File Size	478.92 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCT040W65G3-4-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

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Published: Feb 16, 2024 |