SCT040W65G3-4 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCT040W65G3-4 Datasheet Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT040W65G3-4
Manufacturer: STMicroelectronics ↗
File Size: 478.92 KB
Datasheet: SCT040W65G3-4-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high operating junct

Applications

* Gate(4) Driver source(3)
* Switching mode power supply
* Power supply for renewable energy systems

SCT040W65G3-4 Distributors

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SCT040W65G3-4 Silicon carbide Power MOSFET STMicroelectronics

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