SCTH70N120G2V-7 Datasheet, Mosfet, STMicroelectronics

SCTH70N120G2V-7 Features

• Mosfet Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance <

PDF File Details

Part number:

SCTH70N120G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

373.17kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH70N120G2V-7 Application

• Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide P

TAGS

SCTH70N120G2V-7

STMicroelectronics

📁 Related Datasheet

SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.

SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.

SCTH35N65G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.

SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH40N120G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS.

SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH60N120G2-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.

SCTH60N120G2-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH60N120G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH90N65G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate .

SCTHC250N120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTHC250N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package 4 Features 1 4.