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SCTH70N120G2V-7

Silicon carbide Power MOSFET

SCTH70N120G2V-7 Features

* Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Source sensing pin for increased efficiency Applications

* Switching mode power supply

SCTH70N120G2V-7 Datasheet (373.17 KB)

Preview of SCTH70N120G2V-7 PDF

Datasheet Details

Part number:

SCTH70N120G2V-7

Manufacturer:

STMicroelectronics ↗

File Size:

373.17 KB

Description:

Silicon carbide power mosfet.
SCTH70N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver so.

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SCTH70N120G2V-7 Silicon carbide Power MOSFET STMicroelectronics

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