SCTHC250N120G3AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

The SCTHC250N120G3AG by STMicroelectronics is a Automotive-grade silicon carbide Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	SCTHC250N120G3AG
Manufacturer	STMicroelectronics
File Size	963.84 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHC250N120G3AG-STMicroelectronics.pdf
Additional preview pages of the SCTHC250N120G3AG datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23.
1.
Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased effic.

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Published: Sep 21, 2024 |