SCTHC250N120G3AG Datasheet, Mosfet, STMicroelectronics

✔ SCTHC250N120G3AG Features

1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23
1
Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ.

PDF File Details

STMicroelectronics manufacturer logo

Part number:

SCTHC250N120G3AG

Manufacturer:

STMicroelectronics ↗

File Size:

963.84kb

Download:

📄 Datasheet

Description:

Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

📥 Download PDF (963.84kb)

📁 Related Datasheet

SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.

SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.

SCTH35N65G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.

SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH40N120G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS.

SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH60N120G2-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.

SCTH60N120G2-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH60N120G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH70N120G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH70N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver so.

SCTH90N65G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate .

Stock and price

STMicroelectronics

(Alt: SCTHC250N120G3AG)

Avnet Silica

SCTHC250N120G3AG

0 In Stock

Unit Price : $0

🛒 Buy Now

TAGS

SCTHC250N120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics