SCTHC250N120G3AG Datasheet - STMicroelectronics

Automotive-grade silicon carbide Power MOSFET

* 1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23

* 1

* Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entir

SCTHC250N120G3AG

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Automotive-grade silicon carbide power mosfet.

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