SCTHC250N120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTHC250N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package 4 .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTHC250N120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 963.84 KB
Datasheet: SCTHC250N120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* 1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23
* 1
* Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entir

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SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTHC250N120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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