Datasheet4U.com

SCTWA70N120G2V - Silicon carbide Power MOSFET

STMicroelectronics

📥 Download Datasheet

SCTWA70N120G2V Datasheet Preview — Preview of SCTWA70N120G2V PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SCTWA70N120G2V
Manufacturer	STMicroelectronics ↗
File Size	224.61 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA70N120G2V-STMicroelectronics.pdf

SCTWA70N120G2V Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) typ. ID SCTWA70N120G2V 1200 V 21 mΩ 91 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

📁 SCTWA70N120G2V Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

Other Datasheets by STMicroelectronics

SCTWA70N120G2V-4 - Silicon carbide Power MOSFET
SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2V - Silicon carbide Power MOSFET
SCTWA40N120G2V-4 - Silicon carbide Power MOSFET

Published: Mar 7, 2023 |