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SCTWA70N120G2V-4 - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTWA70N120G2V-4
Manufacturer	STMicroelectronics ↗
File Size	213.97 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA70N120G2V-4-STMicroelectronics.pdf

SCTWA70N120G2V-4 Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTWA70N120G2V-4 1200 V 30 mΩ 91 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

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Published: Jun 26, 2023 |