* Order code VDS RDS(on) max. ID SCTWA70N120G2V-4 1200 V 30 mΩ 91 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for increa
SCTWA70N120G2V-4 Datasheet (213.97 KB)
SCTWA70N120G2V-4
213.97 KB
Silicon carbide power mosfet.
SCTWA70N120G2V-4
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
HiP247-4
2 34 1
Drain(1, TAB)
Gate(4) Driv.
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