* Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
* Zener-protected Applications
* Switc
STB35N60DM2 Datasheet (749.97 KB)
STB35N60DM2
749.97 KB
N-channel power mosfet.
STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1 D2PAK
Figure 1: Inte.
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