STB35N60DM2 Datasheet - STMicroelectronics

STB35N60DM2 N-channel Power MOSFET

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB35N60DM2 Features

* Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

* Switc

STB35N60DM2 Datasheet (749.97 KB)