STB37N60DM2AG Datasheet - STMicroelectronics

STB37N60DM2AG N-channel Power MOSFET

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB37N60DM2AG Features

* Order code STB37N60DM2AG VDS 600 V RDS(on) max. 0.110 Ω ID 28 A PTOT 210 W 3 1 D2PAK Figure 1: Internal schematic diagram

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resista

STB37N60DM2AG Datasheet (750.70 KB)