STB6NM60N Datasheet - STMicroelectronics

STB6NM60N N-channel Power MOSFET

duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on- resistance and gate charge. It is therefore suitable sofor the most dem.

STB6NM60N Features

* Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te

* 100% avalanche tested le

STB6NM60N Datasheet (668.76 KB)