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STD19N3LLH6AG N-channel Power MOSFET

STD19N3LLH6AG Description

STD19N3LLH6AG Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: In.
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

STD19N3LLH6AG Features

* Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W

STD19N3LLH6AG Applications

* and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
* Logic level Applications

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics STD19N3LLH6AG-like datasheet