STD19N3LLH6AG Datasheet (STMicroelectronics)

STD19N3LLH6AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STD19N3LLH6AG Table 1: Device summary Marking Package 19N3LLH6 DPAK Packing Tape and reel Oc

STD19N3LLH6AG Features

* Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level Applications