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STD19N3LLH6AG N-channel Power MOSFET

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Description

STD19N3LLH6AG Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: In.
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

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Features

* Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W

Applications

* and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
* Logic level Applications

STD19N3LLH6AG Distributors

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