STD19N3LLH6AG Datasheet, Mosfet, STMicroelectronics

STD19N3LLH6AG Features

• Mosfet Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance

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STD19N3LLH6AG

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting

STD19N3LLH6AG Application

• Applications and AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Lo

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STD19N3LLH6AG

STMicroelectronics

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