STD19NF20
773.92kb
N-channel power mosfet. This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that
TAGS
📁 Related Datasheet
STD19N3LLH6AG - N-channel Power MOSFET
(STMicroelectronics)
STD19N3LLH6AG
Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: In.
STD19NE06 - N-CHANNEL POWER MOSFET
(ST Microelectronics)
N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK STripFET™ POWER MOSFET
TYPE STD19NE06
s s s s s
STD19NE06
VDSS 60 V
RDS(on) <0.050 Ω
ID 19 A
s
TYPICAL R.
STD19NE06L - N-CHANNEL POWER MOSFET
(ST Microelectronics)
®
STD19NE06L
N - CHANNEL 60V - 0.038 Ω - 19A - TO-251/TO-252 STripFET™ POWER MOSFET
TYPE STD19NE06L
s s s s
V DSS 60 V
R DS(o n) < 0.05 Ω
ID 19 A.
STD1955NL - N-Channel E nhancement Mode Field Effect Transistor
(SamHop Microelectronics)
S amHop Microelectronics C orp.
S T U/D1955NL
Arp,12 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
5.
STD100 - Duct Temperature Sensor
(Schneider)
Field Devices Europe
STD100 Duct Temperature Sensor NTC 1.8 kW for Vista
1
The STD100 temperature sensor is intended for air duct mounting.The STD10.
STD100 - Thyristor-Diode Modules
(Sirectifier Semiconductors)
STD/SDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Type VRSM VDSM V STD/SDT100GK08 900 STD/SDT100GK12 1300 STD/SDT100GK14 1500 STD/SDT100GK16.
21BRCX-500-H7 - N-CHANNEL MOSFET
(STMicroelectronics)
STD100N03L-1 STD100N03L
N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
General features
Type STD100N03L STD100N03L-1
■ ■ ■
Packa.
21BRCX-500-H7A - N-CHANNEL MOSFET
(STMicroelectronics)
STD100N03L-1 STD100N03L
N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
General features
Type STD100N03L STD100N03L-1
■ ■ ■
Packa.
STD100N10F7 - N-channel Power MOSFET
(STMicroelectronics)
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7
Datasheet
N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, .
STD100N10F7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L.