* Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized
* Very low intrinsic capacitance
* Improved diode reverse recovery characteristics
* Zen
STD1HN60K3 Datasheet (797.12 KB)
STD1HN60K3
797.12 KB
N-channel power mosfet.
STD1HN60K3, STU1HN60K3
N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages
Datasheet
* production data
TAB.
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