STF150N10F7 Datasheet - STMicroelectronics

STF150N10F7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STF150N10F7 Table 1. Device.

STF150N10F7 Features

* 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Figure 1. Internal schematic diagr

STF150N10F7-STMicroelectronics.pdf