STF26N60M2

N-channel Power MOSFET

STMicroelectronics

STF26N60M2 Features

* Order code VDS RDS(on) max. ID STF26N60M2 650 V 165 mΩ 20 A 3 2 1 TO-220FP D(2)

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Applications G(1)

* Switching applications

STF26N60M2 General Description

S(3) AM15572v1_no_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high ef.

STF26N60M2 Datasheet (223.27 KB)