STF26NM60N-H

N-channel MOSFET

STMicroelectronics

STF26NM60N-H Features

* Type STF26NM60N-H

* VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 Application

* TO-220FP Switching applications Description This series of devices implements second generation MDmesh™ t

STF26NM60N-H General Description

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency .

STF26NM60N-H Datasheet (738.46 KB)