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STGB20N40LZ Datasheet - STMicroelectronics

STGB20N40LZ Automotive-grade 390V internally clamped IGBT

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

STGB20N40LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pulsed current capability

* Gate and gate-emitter resist

STGB20N40LZ Datasheet (1.11 MB)