STGB20V60DF 600V 20A very high speed trench gate field-stop IGBT

STMicroelectronics

STGB20V60DF Description

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Feat.
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

STGB20V60DF Features

* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series 3 2 1 1 3
* Tail-less switching off
* Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safe paralleling
* Low thermal

STGB20V60DF Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

📥 Download Datasheet

STGB20V60DF Datasheet Preview — Preview of STGB20V60DF PDF

Datasheet Details

Part number: STGB20V60DF
Manufacturer: STMicroelectronics ↗
File Size: 2.07 MB
Datasheet: STGB20V60DF-STMicroelectronics.pdf
Description: 600V 20A very high speed trench gate field-stop IGBT

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600V 20A very high speed trench gate field-stop IGBT STMicroelectronics

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