STGB20V60DF Datasheet (STMicroelectronics) - 600V 20A very high speed trench gate field-stop IGBT

STGB20V60DF, 600V 20A very high speed trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore,

STGB20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series 3 2 1 1 3

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal