STGB50H65FB2 Datasheet - STMicroelectronics

STGB50H65FB2 IGBT

E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced s.

STGB50H65FB2 Features

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) temperature coefficient C(2, TAB) G(1) Applications

* W

STGB50H65FB2-STMicroelectronics.pdf