Datasheet Details
Part number:
STGB50H65FB2
Manufacturer:
File Size:
651.63 KB
Description:
IGBT
Features
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient C(2, TAB) G(1) Applications
* W
STGB50H65FB2-STMicroelectronics.pdf
STGB50H65FB2, IGBT
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced s
STGB50H65FB2 Distributor
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