STGB50H65FB2 - IGBT

STMicroelectronics

The STGB50H65FB2 by STMicroelectronics is a IGBT. Below is the official datasheet preview.

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STGB50H65FB2 IGBT by STMicroelectronics - Datasheet Preview — Official preview page of the **STGB50H65FB2** IGBT datasheet (STMicroelectronics).

Datasheet Details

Part number	STGB50H65FB2
Manufacturer	STMicroelectronics
File Size	651.63 KB
Description	IGBT
Datasheet	STGB50H65FB2-STMicroelectronics.pdf
Additional preview pages of the STGB50H65FB2 datasheet.

STGB50H65FB2 Product details

Description

E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.The performance of the HB2 series is G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.The result is a product specifically designed to maximize efficiency for a wide range of fast applications.Product status link STGB50H65FB2 Product summary Order code STGB50H65F

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V(typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient C(2, TAB) G(1).

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Published: Apr 26, 2020 |