STGB50H65FB2 IGBT

STMicroelectronics

STGB50H65FB2 Description

STGB50H65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package TAB 2 3 1 D²PAK .
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

STGB50H65FB2 Features

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ. ) @ IC = 50 A
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance

STGB50H65FB2 Applications

* Welding
* Power factor correction
* UPS
* Solar inverters

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Datasheet Details

Part number: STGB50H65FB2
Manufacturer: STMicroelectronics ↗
File Size: 651.63 KB
Datasheet: STGB50H65FB2-STMicroelectronics.pdf
Description: IGBT

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