STGF19NC60KD

20 A - 600 V - short circuit rugged IGBT

STMicroelectronics

STGF19NC60KD Features

* Low on-voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross conduction susceptibility)

* Short circuit withstand time 10 µs

* IGBT co-packaged with Ultrafast free-wheeling diode Applications

* High frequency inverters

* Motor drivers Description This IGBT utilizes the

STGF19NC60KD General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet

* production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Ma.

STGF19NC60KD Datasheet (1.03 MB)