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STGF4M65DF2 IGBT

STGF4M65DF2 Description

STGF4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TO-220FP Figure 1: Internal schematic diagram C (.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

STGF4M65DF2 Features

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.6 V (typ. ) @ IC = 4 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistance

STGF4M65DF2 Applications

* Motor control
* UPS

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IGBT STMicroelectronics
STMicroelectronics STGF4M65DF2-like datasheet