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STGF5H60DF Datasheet - STMicroelectronics

STGF5H60DF IGBT

These devices are IGBTs developed using an advanced proprietary trench gate fieldE(3) stop structure. These devices are part of the H series of IGBTs, which represents an NG1E3C2T optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency conver.

STGF5H60DF Datasheet (888.01 KB)

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