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STH130N8F7-2 N-CHANNEL POWER MOSFET

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Description

STH130N8F7-2 N-channel 80 V, 4.2 mΩ typ., 110 A STripFET™ F7 Power MOSFET in an H²PAK-2 package Datasheet - production data Figure 1: Internal schem.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

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