STH110N10F7-2 - N-Channel MOSFET

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Datasheet Details

Low Drain-Source On-Resistance

Drain Current.
ID= 110A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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