STH170N8F7-2 Datasheet - INCHANGE

Datasheet Details

Part number:

STH170N8F7-2

Manufacturer:

INCHANGE

File Size:

265.30 KB

Description:

N-Channel MOSFET

isc N-Channel MOSFET Transistor FEATURES *Drain Current *ID= 120A@ TC=25℃ *Drain Source Voltage- : VDSS= 80V(Min) *Static Drain-Source On-Resistance : RDS(on) = 3.7mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable op

STH170N8F7-2-INCHANGE.pdf

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STH170N8F7-2, N-Channel MOSFET

*Low Drain-Source On-Resistance APPLICATIONS *Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

STH170N8F7-2 Distributor

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STH170N8F7-2 N-Channel MOSFET INCHANGE

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