STH175N4F6-2AG N-channel Power MOSFET

STMicroelectronics

Description

STH175N4F6-2AG, STH175N4F6-6AG Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet.
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

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Datasheet Specifications

Part number: STH175N4F6-2AG
Manufacturer: STMicroelectronics ↗
File Size: 564.96 KB
Datasheet: STH175N4F6-2AG-STMicroelectronics.pdf
Description: N-channel Power MOSFET

Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A

Applications

* and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss Applications

STH175N4F6-2AG Distributors

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STH175N4F6-2AG N-channel Power MOSFET STMicroelectronics

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