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STH175N4F6-2AG Datasheet - STMicroelectronics

STH175N4F6-2AG N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Order codes STH175N4F6-2AG STH175N4F6-6AG Table 1. Device summary Marking Package 175N4F6 H2PAK-2 H2PAK-.

STH175N4F6-2AG Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate

STH175N4F6-2AG-STMicroelectronics.pdf

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Datasheet Details

Part number:

STH175N4F6-2AG

Manufacturer:

STMicroelectronics ↗

File Size:

564.96 KB

Description:

N-channel power mosfet.

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