STH175N4F6-2AG Datasheet (STMicroelectronics)

STH175N4F6-2AG, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Order codes STH175N4F6-2AG STH175N4F6-6AG Table 1.

Device summary Marking Package 175N4F6 H2PAK-2 H2PAK-

STH175N4F6-2AG Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate