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STH170N8F7-2 N-CHANNEL POWER MOSFET

STH170N8F7-2 Description

STH170N8F7-2 N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet * production data TAB 2 3 1 H2PA.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

STH170N8F7-2 Features

* Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Figure 1. Internal schematic diagram ' 7$%

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STH170N8F7-2-like datasheet