STH170N8F7-2 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STH170N8F7-2
Manufacturer	STMicroelectronics
File Size	388.86 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH170N8F7-2 Datasheet
Additional preview pages of the STH170N8F7-2 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness Figure 1. Internal schematic diagram '7$%.
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Published: Mar 22, 2016 |