STH170N8F7-2 Datasheet (STMicroelectronics)

STH170N8F7-2, N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

6 +3$.

Order code STH170N8F7-2 Table 1.

Device

STH170N8F7-2 Features

* Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Figure 1. Internal schematic diagram '7$%