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STH150N10F7-2

N-Channel MOSFET

STH150N10F7-2 Features

* Drain Current

* ID= 110A@ TC=25℃

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Sourc

STH150N10F7-2 General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STH150N10F7-2 Datasheet (264.91 KB)

Preview of STH150N10F7-2 PDF

Datasheet Details

Part number:

STH150N10F7-2

Manufacturer:

INCHANGE

File Size:

264.91 KB

Description:

N-channel mosfet.

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STH150N10F7-2 N-Channel MOSFET INCHANGE

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