STH15810-2 - N-channel Power MOSFET

STMicroelectronics

STH15810-2 Datasheet Preview — Preview of STH15810-2 PDF

Datasheet Details

Part number	STH15810-2
Manufacturer	STMicroelectronics ↗
File Size	537.48 KB
Description	N-channel Power MOSFET
Datasheet	STH15810-2-STMicroelectronics.pdf

STH15810-2 Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS STH15810-2 100 V RDS(on)max 0.0039 Ω ID 110 A PTOT 250 W.
100% avalanche tested.
Ultra low on-resistance.

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Published: Jun 24, 2019 |