* Order code VDS STH15810-2 100 V RDS(on)max 0.0039 Ω ID 110 A PTOT 250 W
* 100% avalanche tested
* Ultra low on-resistance Applications
* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results
STH15810-2 Datasheet (537.48 KB)
STH15810-2
537.48 KB
N-channel power mosfet.
STH15810-2
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package
Datasheet - production data
Figure 1: Internal sche.
📁 Related Datasheet
STH150N10F7-2 N-CHANNEL POWER MOSFET (STMicroelectronics)
STH150N10F7-2 N-Channel MOSFET (INCHANGE)
STH15N50 N-CHANNEL Power MOS MOSFET (STMicroelectronics)
STH15N50FI N-CHANNEL Power MOS MOSFET (STMicroelectronics)
STH15NA50 N-CHANNEL Power MOS MOSFET (ST Microelectronics)
STH15NA50FI N-CHANNEL Power MOS MOSFET (ST Microelectronics)
STH15NB50 N-CHANNEL Power MOS MOSFET (ST Microelectronics)
STH15NB50FI N-CHANNEL Power MOS MOSFET (ST Microelectronics)
STH1061 NPN Plastic Power Transistor (SEMTECH ELECTRONICS)
STH10N80K5-2AG Automotive-grade N-channel Power MOSFET (STMicroelectronics)
