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STH15810-2 N-channel Power MOSFET

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Description

STH15810-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal sche.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code VDS STH15810-2 100 V RDS(on)max 0.0039 Ω ID 110 A PTOT 250 W
* 100% avalanche tested

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📌 All Tags

N-channel Power MOSFET STMicroelectronics
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