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STH150N10F7-2 N-CHANNEL POWER MOSFET

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Description

STH150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package Datasheet * production data TAB 2 3 1 H2.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

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