STH150N10F7-2 Datasheet (STMicroelectronics)

STH150N10F7-2, N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

* 6 $0Y Order code STH150N10F7-2 S

STH150N10F7-2 Features

* Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications