STH80N10F7-2 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STH80N10F7-2 *.

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Datasheet Specifications

Part number: STH80N10F7-2
Manufacturer: INCHANGE
File Size: 236.92 KB
Datasheet: STH80N10F7-2-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 80 54 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation 110 W T

STH80N10F7-2 Distributors

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STH80N10F7-2 N-Channel MOSFET INCHANGE

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