STH2N120K5-2AG Datasheet (STMicroelectronics) - Automotive-grade N-channel Power MOSFET

STH2N120K5-2AG, Automotive-grade N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

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STH2N120K5-2AG Features

* Order code STH2N120K5-2AG VDS 1200 V RDS(on) max. 10 Ω

* AEC-Q101 qualified

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested ID 1.5 A PTOT 60 W G(1) S(2, 3) Applications