Part number:
STHI07N50
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File Size:
195.11 KB
Description:
High injection n-channel enhancement mode power mos transistors.
STHI07N50 Datasheet (195.11 KB)
Datasheet Details
STHI07N50 Features
* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and rel
STHI07N50 Datasheet (195.11 KB)
Datasheet Details
STHI07N50
195.11 KB
High injection n-channel enhancement mode power mos transistors.
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