* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and rel
STHI07N50 Datasheet (195.11 KB)
STHI07N50
195.11 KB
High injection n-channel enhancement mode power mos transistors.
STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
STHI07N50 STHI07N50FI
Voss
500 .
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