Datasheet Specifications
- Part number
- STHI07N50
- Manufacturer
- STMicroelectronics ↗
- File Size
- 195.11 KB
- Datasheet
- STHI07N50-STMicroelectronics.pdf
- Description
- HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Description
STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 .
Features
* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relApplications
* AUTOMOTIVE IGNITIONSTHI07N50 Distributors
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