STHI07N50FI, STHI07N50 HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics

Description

STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 .

📥 Download Datasheet

STHI07N50FI Datasheet Preview — This datasheet PDF includes multiple part numbers: STHI07N50FI, STHI07N50. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: STHI07N50FI, STHI07N50
Manufacturer: STMicroelectronics ↗
File Size: 195.11 KB
Datasheet: STHI07N50-STMicroelectronics.pdf
Description: HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Note: This datasheet PDF includes multiple part numbers: STHI07N50FI, STHI07N50.
Please refer to the document for exact specifications by model.

Features

* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and rel

Applications

* AUTOMOTIVE IGNITION

STHI07N50FI Distributors

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STHI07N50 HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics

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