* Order code STHU36N60DM6AG VDS 600 V RDS(on) max. 99 mΩ ID 29 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, input capacitance and resistance
* 100% avalanche tested
* Extremely h
STHU36N60DM6AG Datasheet (663.96 KB)
STHU36N60DM6AG
663.96 KB
N-channel power mosfet.
STHU36N60DM6AG
Datasheet
Automotive-grade N-channel 600 V, 84 mΩ typ., 29 A MDmesh DM6 Power MOSFET in an HU3PAK package
TAB 7
1 HU3PAK
Drain(TAB)
F.
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