STI150N10F7 Datasheet - STMicroelectronics

STI150N10F7 N-CHANNEL POWER MOSFET

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order codes STI150N10F7 STP150N10F7 T.

STI150N10F7 Features

* Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching app

STI150N10F7 Datasheet (802.41 KB)