STIPN2M50T-H Datasheet - STMicroelectronics

STIPN2M50T-H, 500V MOSFET

STIPN2M50T-H SLLIMM™-nano small low-loss intelligent molded module IPM, 3-phase inverter, 2 A, 1.7 Ω max., 500 V MOSFET Datasheet - production data A.
Features. IPM 2 A, 500 V, RDS(on) = 1. Optimized for low electro.

Features

* IPM 2 A, 500 V, RDS(on) = 1.7 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving
* Optimized for low electromagnetic interference
* 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pulldown/pull-up resistors
* Undervoltage lockout
* Internal

Applications

* 3-phase inverters for small power motor drives

STIPN2M50T-H-STMicroelectronics.pdf