* IPM 2 A, 500 V, RDS(on) = 1.7 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving
* Optimized for low electromagnetic interference
* 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pulldown/pull-up resistors
* Undervoltage lockout
* Internal
STIPN2M50T-H Datasheet (824.35 KB)
STIPN2M50T-H
824.35 KB
500v mosfet.
STIPN2M50T-H
SLLIMM™-nano small low-loss intelligent molded module IPM, 3-phase inverter, 2 A, 1.7 Ω max., 500 V MOSFET
Datasheet - production data
A.
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