* IPM 2 A, 500 V, RDS(on) = 1.7 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving
* Optimized for low electromagnetic interference
* 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/ pull-up resistors
* Undervoltage lock
STIPNS2M50T-H Datasheet (1.48 MB)
STIPNS2M50T-H
1.48 MB
Mosfet.
STIPNS2M50T-H
Datasheet
SLLIMM-nano IPM, 3-phase inverter, 2 A, 1.7 Ω max., 500 V MOSFET
16 17
1 26
NSDIP-26L
Product status STIPNS2M50T-H
Device s.
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